Surface vacancies in II-VI and III-V zinc blende semiconductors
- Creators
- Daw, M. S.
- Smith, D. L.
- Swarts, C. A.
- McGill, T. C.
Abstract
We present calculations of the bound state energy levels of ideal vacancies near the (110) surface of some zinc blende II-VI and III-V semiconductors: CdTe, ZnTe, GaAs, AlAs, InAs, and some alloys among them. Here we compare vacancies near the surface of II-VI's with those of III-V's. In contrast to the III-V's, where a neutral vacancy has an odd number of electrons, a neutral vacancy in a II-VI semiconductor has an even number. We find that single anion vacancies in Ill-V's can behave as both donors and acceptors, and follow observed trends with ionicity and alloy composition. We also find that single cation vacancies in II-VI's behave as double acceptors and the anion vacancies behave as shallow double donors. We suggest experiments to test the importance of vacancies in determining the Fermi level pinning position for II-VI's.
Additional Information
© 1981 American Vacuum Society. Received 30 March 1981; 18 June 1981. The authors acknowledge a number of very useful discussions with Professor W. E. Spicer and H. Wieder. Work supported in part by the Office of Naval Research under Contract no. N00014-79-C-0797.Attached Files
Published - DAWjvst81a.pdf
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Additional details
- Eprint ID
- 32538
- Resolver ID
- CaltechAUTHORS:20120717-163206505
- Office of Naval Research (ONR)
- N00014-79-C-0797
- Created
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2012-07-18Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field