Published August 1, 1983
| Published
Journal Article
Open
Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi_2 on silicon
- Creators
- Shreter, U.
- Fernandez, R.
- Nicolet, M-A.
Chicago
An error occurred while generating the citation.
Abstract
Measurements of sputtering yields and composition profiles have been carried out using backscattering spectrometry for samples of CrSi_2 on Si irradiated with 200‐keV Xe ions. When the CrSi_2 layer is thinner than the ion range, the sputtering yield ratio of Si to Cr increases from 3.5 for room‐temperature irradiation to 65 at 290 °C. For a thick sample, the corresponding increase is from 2.4 to 4.0. only. These changes are explained in terms of a rise in the Si surface concentration at 290 °C. The driving force for this process seems to be the establishment of stoichiometric CrSi_2 compound. Transport of Si to the surface is by ion mixing in the thin sample and thermal diffusion through the thick layer.
Additional Information
© 1983 American Institute of Physics. Received 10 March 1983; accepted for publication 12 May 1983. This work was performed under the Benevolent U. R. Fund of the Böhmische Physical Society (B. M. Ullrich). The authors also acknowledge the partial financial support for the operation of the ion implantation system by the U. S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D. Bickler).Attached Files
Published - SHREappl83.pdf
Files
SHREappl83.pdf
Files
(256.7 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:eb07f83b079812bd2f98cb1d1edda893
|
256.7 kB | Preview Download |
Additional details
- Eprint ID
- 32496
- Resolver ID
- CaltechAUTHORS:20120717-090516601
- Böhmische Physical Society
- Department of Energy (DOE)
- NASA/JPL/Caltech
- Created
-
2012-07-17Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field