Ion impact energy distribution and sputtering of Si and Ge
- Creators
- Hossain, M. Z.
- Freund, J. B.
- Johnson, H. T.
Abstract
The spatial distribution of ion deposited energy is often assumed to linearly relate to the local ion-induced sputtering of atoms from a solid surface. This—along with the assumption of an ellipsoidal region of energy deposition—is the central mechanism used in the Bradley and Harper [J. Vac. Sci. Technol. A 6, 2390 (1988)] explanation of ion-induced surface instabilities, but it has never been assessed directly. To do this, we use molecular dynamics to compute the actual distribution of deposited energy and relate this to the source of sputtered atoms for a range of ion energies (250 eV and 1500 eV), ion species (Ar, Kr, Xe, and Rn), targets (Si and Ge), and incidence angles (0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, and 80°). It is found that the energy deposition profile is remarkably ellipsoidal but that the relation between local deposited energy and local sputtering is not simple. It depends significantly upon the incidence angle, and the relation between energy and local sputter yield is nonlinear, though with a nearly uniform power-law relation. These results will affect, in particular, surface instability models based upon simpler approximations.
Additional Information
© 2012 American Institute of Physics. Received 23 February 2012; accepted 17 April 2012; published online 18 May 2012. The authors gratefully acknowledge the support of NSF grant CMMI-0825173. The computational support provided by the National Center for Supercomputing Applications is also acknowledged.Attached Files
Published - Hossain2012p18805J_Appl_Phys.pdf
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Additional details
- Eprint ID
- 32431
- Resolver ID
- CaltechAUTHORS:20120713-130533882
- CMMI-0825173
- NSF
- National Center for Supercomputing Applications
- Created
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2012-07-13Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field