Published May 1, 1986
| Published
Journal Article
Open
Effects of ion irradiation on conductivity of CrSi_2 thin films
- Creators
- Banwell, T. C.
- Zhao, X.-A.
- Nicolet, M.-A.
Abstract
Electrical resistivity measurements are used to study damage in CrSi_2 thin films induced by Ne, Ar, or Xe ion irradiation over a fluence range of 10^(10)–10^(15) ions cm^(−2). Irradiation produces a factor of 5–12 increase in film conductivity at the higher fluences. The influence of defect generation and recombination is evident. We speculate that formation of a compound defect is a dominant factor enhancing film conductivity. A temperature dependence at low fluences is reported and tentatively identified.
Additional Information
© 1986 American Institute of Physics. Received 21 October 1985; accepted 14 January 1986. We thank A. Ghatfari for assistance with the evaporations and A. Collinwood for manuscript preparation. We acknowledge the partial financial support by the Office of Naval Research under Contract no. N00014-84-K-0275 (D. Polk). T. Banwell thanks IBM for a fellowship during this work.Attached Files
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Additional details
- Eprint ID
- 32109
- Resolver ID
- CaltechAUTHORS:20120626-152109958
- N00014-84-K-0275
- Office of Naval Research (ONR)
- IBM fellowship
- Created
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2012-06-26Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field