Published June 2, 1986
| Published
Journal Article
Open
Effect of dose rate on ion beam mixing in Nb-Si
Chicago
An error occurred while generating the citation.
Abstract
The influence of dose rate, i.e., ion flux, on ion beam mixing in Nb‐Si bilayer samples was measured at room temperature and 325 °C. At the higher temperature, an increase in dose rate of a factor of 20 caused a decrease in the thickness of the mixed layer by a factor of 1.6 for equal total doses. At room temperature, the same change in flux had no effect on mixing. These results are consistent with radiation‐enhanced diffusion theory in the recombination‐limited regime.
Additional Information
© 1986 American Institute of Physics. Received 10 January 1986; accepted 8 April 1986. This work was supported at Argonne National Laboratory by the U.S. Department of Energy, BES-Materials Sciences, under contract No. W-31-109-Eng-38. Partial financial support at the California Institute of Technology provided by the Office of Naval Research under contract No. N00014-84-16-0275 is also acknowledged.Attached Files
Published - BANapl86.pdf
Files
BANapl86.pdf
Files
(242.9 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:6ca717c40e8d4a992c08fa86f217af3f
|
242.9 kB | Preview Download |
Additional details
- Eprint ID
- 32107
- Resolver ID
- CaltechAUTHORS:20120626-145123709
- Department of Energy (DOE) BES-Materials Sciences
- W-31-109-Eng-38
- Office of Naval Research (ONR)
- N00014-84-16-0275
- Created
-
2012-06-26Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field