Published March 15, 1989
| Published
Journal Article
Open
Thermal reaction of Al/Ti bilayers with contaminated interface
- Creators
- Thuillard, M.
- Tran, L. T.
- Nieh, C. W.
- Nicolet, M-A.
Abstract
We have studied some new aspects of thermal reactions in Al/Ti bilayers in which the interface is purposely contaminated with oxygen. After annealing at a temperature of 460 °C, an Al_3Ti compound forms at the interface, moreover some Al diffuses through the Ti to form a compound at the free surface. The amount of aluminum at the free surface can be as large as at the interface. Nucleation and lateral growth of Al_3Ti at the interface are locally unfavorable. This results in a competition between the lateral growth of Al_3Ti at the Al/Ti interface and the diffusion of Al to the free surface. Once full coverage by Al_3Ti is obtained at the Al/Ti interface, the diffusion of Al to the surface becomes negligible.
Additional Information
© 1989 American Institute of Physics. Received 23 May 1988; accepted for publication 14 November 1988. Technical assistance from Rob Gorris and Bart Stevens is gratefully acknowledged. The financial support was provided in part by the Office of Naval Research under Contract No. N000 14-84-K-0275. We also thank the Swiss National Science Foundation for a fellowship to one of us (M. Thuillard).Attached Files
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Additional details
- Eprint ID
- 31726
- Resolver ID
- CaltechAUTHORS:20120530-151638572
- N000 14-84-K-0275
- Office of Naval Research (ONR)
- Swiss National Science Foundation (SNSF)
- Created
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2012-05-30Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field