Published December 1989
| Published
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A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence
Chicago
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Abstract
A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, and Al_xGa_(1-x)As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order of magnitude increase in lifetime.
Additional Information
© 1989 IEEE. Date of Current Version: 06 August 2002. The authors would like to acknowledge the support of the Office of Naval research and the SDIO-ISTC. One of us (P.S.) would like to acknowledge the support of a graduate NSF fellowship.Attached Files
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Additional details
- Eprint ID
- 31634
- Resolver ID
- CaltechAUTHORS:20120524-131646424
- Office of Naval Research (ONR)
- SDIO-ISTC
- NSF Graduate Fellowship
- Created
-
2012-05-24Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- INSPEC Accession Number
- Other Numbering System Identifier
- 3787445