A 100-Element MESFET Grid Oscillator

Abstract

A planar grid oscillator which combines the outputs of 100 devices quasi-optically is presented. The planar configuration is attractive because it is compatible with present-day IC fabrication techniques. In addition, the grid's structure leads to a transmission-line model that can readily be applied to the design of larger grids in the future. This approach is particularly attractive for wafer-scale integration at millimeter wavelengths. The grid oscillates near 5 GHz and can be frequency tuned with mirror spacing from 4.8 GHz to 5.2 GHz. The far-field radiation patterns for the grid are shown. From the pattern, the directivity is calculated to be 16 dB. The ERP is measured to be 25 W. The DC input power is 3 W, and the power radiated from the grid is calculated to be 0.625 W. This gives a DC-to-RF efficiency of 20%.

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