Published May 1990
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Quasi-optical power-combining arrays
Chicago
Abstract
Semiconductor devices have limited power handling capabilities at high frequencies, particularly at millimeter-wave frequencies. A method is presented for overcoming this problem by combining the outputs of several devices quasi-optically in a resonator cavity. This method has been applied to a number of solid-state devices, including Gunn diodes and MESFETs. The devices do not require an external locking signal because they lock to a mode of the resonator cavity. Effective radiated powers of 22 watts for a 4×4 array of Gunn diodes and 25 watts for a 10×10 array of MESFETs have been achieved.
Additional Information
© 1990 IEEE. Date of Current Version: 06 August 2002. This research was supported by the Army Research Office, the Northrop Corporation, and General Electric.Attached Files
Published - RUTims90.pdf
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Additional details
- Eprint ID
- 31399
- Resolver ID
- CaltechAUTHORS:20120510-082320592
- Army Research Office (ARO)
- Northrop Corporation
- General Electric
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2012-05-10Created from EPrint's datestamp field
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2022-10-26Created from EPrint's last_modified field