Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions
Abstract
Narrow gaps are formed in suspended single- to few-layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with voltages of 2.5 to ~4.5 V, corresponding to an ON pulse, and ~8 V, corresponding to an OFF pulse. Electron microscope imaging of the devices shows that the graphene sheets typically remain suspended and that the device conductance tends to zero when the observed gap is large. The switching rate is strongly temperature dependent, which rules out a purely electromechanical switching mechanism. This observed switching in suspended graphene devices strongly suggests a switching mechanism via atomic movement and/or chemical rearrangement and underscores the potential of all-carbon devices for integration with graphene electronics.
Additional Information
© 2012 American Chemical Society. Received: September 10, 2011. Revised: March 15, 2012. Publication Date (Web): March 19, 2012. The authors acknowledge the support by NSF CAREER DMR/0748910, NSF DMR/1106358, NSF ECCS/0926056, ONR N00014-09-1-0724, ONR/DMEA H94003-10-2-1003 and the FENA Focus Center. CNL acknowledges the support by the "Physics of Graphene" program at KITP.Attached Files
Supplemental Material - nl203160x_si_002.mov
Supplemental Material - nl203160x_si_003.mov
Supplemental Material - nl203160x_si_004.mov
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Additional details
- Eprint ID
- 31365
- Resolver ID
- CaltechAUTHORS:20120508-155354443
- NSF CAREER
- DMR/0748910
- NSF CAREER
- DMR/1106358
- NSF
- ECCS/0926056
- ONR
- N00014-09-1-0724
- ONR/DMEA
- H94003-10-2-1003
- FENA Focus Center
- Physics of Graphene program at KITP
- Created
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2012-05-09Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field