Published March 2012
| public
Journal Article
Surface-Dominated Conduction in a 6 nm thick Bi_2Se_3 Thin Film
Chicago
An error occurred while generating the citation.
Abstract
We report a direct observation of surface dominated conduction in an intrinsic Bi_2Se_3 thin film with a thickness of six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 ± 5 meV above the Dirac point, which is in agreement with 70 ± 20 meV obtained from scanning tunneling spectroscopies. Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range.
Additional Information
© 2012 American Chemical Society. Received: December 1, 2011. Revised: February 1, 2012. Publication Date (Web): February 8, 2012. This work was in part supported by the Focus Center Research Program - Center on Functional Engineered Nano Architectonics (FENA) and DARPA. Y.W. acknowledges the support from the National Science Foundation of China (No.11174244).Additional details
- Eprint ID
- 31361
- Resolver ID
- CaltechAUTHORS:20120508-155021196
- Focus Center Research Program on Functional Engineered Nano Architectonics (FENA)
- Defense Advanced Research Projects Agency (DARPA)
- National Science Foundation of China (NSFC)
- 11174244
- Created
-
2012-05-09Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field