Performance and applications of a 100-element HBT grid amplifier
Abstract
A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction bipolar transistor (HBT) differential pairs that include a resistive network to provide self-bias to the base. The planar metal grid structure was empirically designed to provide effective coupling between the HBTs and free space. The peak gain of the grid was 10 dB at 10 GHz with a 3 dB bandwidth of 1 GHz. The input and output matches are better than 15 dB at 10 GHz. The maximum output power is 450 mW, and the minimum noise figure is 7 dB. Tests show that the grid is quite tolerant of failures-the output power dropped by only 1 dB when the 10% of the inputs were detuned. The device amplifies beams with incidence angles up to 30° with less than a 3-dB drop in power. By providing external feedback with a twist reflector, the grid amplifier can be used as a broadband tunable source. This source could be tuned from 6.5 GHz to 11.5 GHz with a peak effective radiated power (ERP) of 6.3 W at 9.9 GHz.
Additional Information
© 1993 IEEE. Date of Current Version: 06 August 2002. The work at Caltech is supported by the Army Research Office, the Northrop Corporation, the Naval Weapons Center in China Lake, CA, and a fellowship from the Rockwell International Trust.Attached Files
Published - RUTapmc93.pdf
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Additional details
- Eprint ID
- 29648
- Resolver ID
- CaltechAUTHORS:20120308-110618061
- Army Research Office (ARO)
- Northrop Corporation
- Naval Weapons Center, China Lake CA
- Rockwell International Trust
- Created
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2012-03-12Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field
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- 5043700