X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface
Abstract
X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/lnAs heterojunction. Anion cross-incorporation was measured in 20 Å thick GaSb layers grown on lnAs, and 20 Å thick InAs layers grown on GaSb for cracked and uncracked sources. It was found that significantly less anion cross-incorporation occurs in structures grown with cracked sources. Interface formation was investigated by studying Sb soaks of InAs surfaces and As soaks of GaSb surfaces as a function of cracker power and soak time. Exchange of the group V surface atoms was found to be an increasing function of both cracker power and soak time. We find that further optimization of current growth parameters may be possible by modifying the soak time used at interfaces.
Additional Information
© 1993 American Vacuum Society. Received 25 January 1993; accepted 24 March 1993. The authors gratefully acknowledge helpful discussions with D. H. Chow. This work was supported in part by the Office of Naval Research under Contract Nos. N00014-90-J-1742 and N00014-89-C-0203, and the Air Force Office of Scientific Research under Contract No. AFOSR-90-0239.Attached Files
Published - WANjvstb93.pdf
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Additional details
- Eprint ID
- 29640
- Resolver ID
- CaltechAUTHORS:20120308-070903192
- Office of Naval Research (ONR)
- N00014-90-J-1742
- Office of Naval Research (ONR)
- N00014-89-C-0203
- Air Force Office of Scientific Research (AFOSR)
- AFOSR-90-0239
- Created
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2012-03-12Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field