A 10-Watt X-Band Grid Oscillator
Abstract
A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660 W at 9.8 GHz and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3 W, or 103 mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 7.4 V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the SSB noise-to-carrier ratio was measured and found to be essentially independent of the radiation angle. The average SSB noise level was -87 dBc/Hz at an offset of 150 kHz from the carrier. An average improvement in the SSB noise-to-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a 16-transistor grid
Additional Information
© 1994 IEEE. Issue Date: 23-27 May 1994; Date of Current Version: 06 August 2002. This research was supported by the Army Research Office, the Northrop Corporation, and a fellowship from the Rockwell International Trust. M.P. De Lisio holds an NSF fellowship. Further details of this work are available in the Ph.D. thesis Grid Mizers and Power Grid Oscillafors by Jon Hacker, available from Caltech.Attached Files
Published - HACims94.pdf
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Additional details
- Eprint ID
- 29595
- Resolver ID
- CaltechAUTHORS:20120306-124144454
- Army Research Office (ARO)
- Northrop Corporation
- Rockwell International Trust
- NSF Fellowship
- Created
-
2012-03-13Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- INSPEC Accession Number
- Other Numbering System Identifier
- 4795569