Published June 1995
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A 100-Element MODFET Grid Amplifier
Chicago
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Abstract
A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of gain at 10.1 GHz. The 3-dB bandwidth is 1.2 GHz. We present a model for the gain of the grid versus frequency and compare measurement with theory.
Additional Information
© 1995 IEEE. Date of Current Version: 06 August 2002. This research was supported by the Army Research Office and a grant from Martin Marietta Laboratories. M.P. DeLisio holds an NSF fellowship. The authors are grateful to Martin Marietta Laboratories for supplying the differential-pair chips. Furthermore, we would like to thank Dr. S. Weinreb, Dr. S. Duncan, and Dr. N. Byer of Martin Marietta Laboratories for their suggestions and support.Attached Files
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Additional details
- Eprint ID
- 29356
- Resolver ID
- CaltechAUTHORS:20120217-100159654
- Army Research Office (ARO)
- Martin Marietta Laboratories
- Created
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2012-02-17Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- INSPEC Accession Number
- Other Numbering System Identifier
- 5188810