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Published September 1995 | Published
Journal Article Open

Real-time extraction of growth rates from rotating substrates during molecular-beam epitaxy

Abstract

We present a method for measuring molecular‐beam epitaxy growth rates in near real‐time on rotating substrates. This is done by digitizing a video image of the reflection high‐energy electron diffraction screen, automatically tracking and measuring the specular spot width, and using numerical techniques to filter the resulting signal. The digitization and image and signal processing take approximately 0.4 s to accomplish, so this technique offers the molecular‐beam epitaxy grower the ability to actively adjust growth times in order to deposit a desired layer thickness. The measurement has a demonstrated precision of approximately 2%, which is sufficient to allow active control of epilayer thickness by counting monolayers as they are deposited. When postgrowth techniques, such as frequency domain analysis, are also used, the reflection high‐energy electron diffraction measurement of layer thickness on rotating substrates improves to a precision of better than 1%. Since all of the components in the system described are commercially available, duplication is straightforward.

Additional Information

© 1995 American Vacuum Society. Received 14 March 1994; accepted 28 July 1995. The authors wish to thank H. J. Levy for his helpful input on numerical signal processing techniques. This work was supported by the office of Naval Research under Contract No. N00014-93-1-0710.

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