Published February 6, 1995
| Published
Journal Article
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Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures
Abstract
Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h.
Additional Information
© 1995 American Institute of Physics. Received 28 June 1994; accepted for publication 30 November 1994. This work was supported by the U.S. Department of Energy under Grant DE-FG03-89ER45395. One of us (K.V.S.) acknowledges support from a J.S. Fluor Foundation Fellowship.Attached Files
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Additional details
- Eprint ID
- 29299
- Resolver ID
- CaltechAUTHORS:20120215-093505302
- Department of Energy (DOE)
- DE-FG03-89ER45395
- J. S. Fluor Foundation
- Created
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2012-03-21Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field