Published June 1999
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Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS
Abstract
The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator.
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© 1999 IEEE. Date of Current Version: 06 August 2002.Attached Files
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