Published September 2005
| public
Book Section - Chapter
A Wideband 77GHz, 17.5dBm Power Amplifier in Silicon
- Creators
- Komijani, Abbas
-
Hajimiri, Ali
Abstract
A 77GHz, +17.5dBm fully-integrated power amplifier (PA) with 50Ω input and output matching is fabricated in a 0.12μm SiGe BiCMOS process. The power amplifier achieves a peak power gain of 17dB and a maximum single-ended output power of +17.5dBm with 12.8% of power-added efficiency (PAE). It has a 3dB bandwidth of 15GHz and draws 165mA from a 1.8V supply. Microstrip tubs are used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in a small area of 0.6mm.
Additional Information
© 2005 IEEE. Date of Current Version: 10 January 2006. The authors would like to thank IBM Microelectronics for fabricating the chip. They also appreciate valuable help from S. Weinreb, A. Babakhani, A. Natarajan, B. Analui, X. Guan, and E. Afshari. The technical support for CAD tools from Agilent Technologies, Zeland Software Inc. and Ansoft Corp. is also appreciated.Additional details
- Eprint ID
- 24949
- DOI
- 10.1109/CICC.2005.1568732
- Resolver ID
- CaltechAUTHORS:20110819-071747535
- Created
-
2011-08-19Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Series Name
- IEEE Custom Integrated Circuits Conference
- Other Numbering System Name
- INSPEC Accession Number
- Other Numbering System Identifier
- 8834579