Resonant magnetotunneling spectroscopy of p-type-well interband tunneling diodes
Abstract
We report experimental results of quantum transport through InAs/AlSb/GaSb/AlSb/InAs heterostructures having well widths of 7.0, 8.0, and 11.9 nm, respectively, in magnetic fields of up to 8.0 T aligned parallel to the epitaxial growth planes. Application of this resonant magnetotunneling spectroscopy technique allows the well subband dispersions to be probed along the wave vector perpendicular to both the growth direction and the applied magnetic field. In all three samples we observe little change in the current-voltage characteristics below a sample-dependent critical magnetic field B_(crit). Above this critical field, both the main I-V peak and a subsequent shoulder that forms at high fields shift in bias in a manner we attribute to be related to the HH2 and LH1 subbands (where HH and LH denote heavy and light holes), respectively.
Additional Information
© 1996 The American Physical Society. Received 28 August 1995; published in the issue dated 15 May 1996. The authors would like to thank J. F. Swenberg and M. W. Wang for helpful discussions and assistance. One of us (R.R.M.) would like to acknowledge the partial financial support of the National Science Foundation. This work is supported by the Office of Naval Research under Grant No. N00014-89-J-1141.Attached Files
Published - PhysRevB.53.13624_1_.pdf
Files
| Name | Size | Download all |
|---|---|---|
|
md5:6e3482689ad7c30b8f4c5eb5506b0a33
|
147.8 kB | Preview Download |
Additional details
- Eprint ID
- 24575
- Resolver ID
- CaltechAUTHORS:20110728-075734422
- NSF
- Office of Naval Research (ONR)
- N00014-89-J-1141
- Created
-
2011-07-28Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field