Published March 18, 2011
| public
Journal Article
Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe
Abstract
PbSe was expected to have a smaller bandgap and higher thermalconductivity than PbTe. Instead, these values are about the same at high temperature leading to comparable thermoelectric figure of merit, with zT> 1 achieved in heavily doped p-type PbSe.
Additional Information
© 2011 Wiley. Received: November 14, 2010. Published online: February 10, 2011. This work is supported by NASA-JPL and DARPA Nano Materials Program.Additional details
- Eprint ID
- 23216
- DOI
- 10.1002/adma.201004200
- Resolver ID
- CaltechAUTHORS:20110401-155349079
- NASA/JPL
- Defense Advanced Research Projects Agency (DARPA) Nano Materials Program
- Created
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2011-04-04Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field