Published 2010
| Published
Book Section - Chapter
Open
Partial Rank Modulation for Flash Memories
- Creators
- Wang, Zhiying
-
Bruck, Jehoshua
Chicago
Abstract
Rank modulation was recently proposed as an information representation for multilevel flash memories, using permutations or ranks of n flash cells. The current decoding process finds the cell with the i-th highest charge level at iteration i, for i = 1, 2,...,n - 1. Motivated by the need to reduce the number of such iterations, we consider k-partial permutations, where only the highest k cell levels are considered for information representation. We propose a generalization of Gray codes for k-partial permutations such that information is updated efficiently.
Additional Information
© 2010 IEEE. Issue Date: 13-18 June 2010, Date of Current Version: 23 July 2010. This work was supported in part by the NSF Grant ECCS-0802107 and in part by an NSF-NRI award.Attached Files
Published - Wang2010p132772010_Ieee_International_Symposium_On_Information_Theory.pdf
Files
Wang2010p132772010_Ieee_International_Symposium_On_Information_Theory.pdf
Files
(213.7 kB)
Name | Size | Download all |
---|---|---|
md5:24a26a161ccc9cf6a3684d4752917689
|
213.7 kB | Preview Download |
Additional details
- Eprint ID
- 23192
- Resolver ID
- CaltechAUTHORS:20110331-130545474
- NSF
- ECCS-0802107
- Created
-
2011-03-31Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Series Name
- IEEE International Symposium on Information Theory