Published March 2011
| Supplemental Material
Journal Article
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Electronic-Mechanical Coupling in Graphene from in situ Nanoindentation Experiments and Multiscale Atomistic Simulations
Chicago
Abstract
We present the in situ nanoindentation experiments performed on suspended graphene devices to introduce homogeneous tensile strain, while simultaneously carrying out electrical measurements. We find that the electrical resistance shows only a marginal change even under severe strain, and the electronic transport measurement confirms that there is no band gap opening for graphene under moderate uniform strain, which is consistent with our results from the first-principles informed molecular dynamics simulation.
Additional Information
© 2011 American Chemical Society. Received: December 03, 2010; Revised: January 25, 2011. Article ASAP February 10, 2011. Published In Issue March 09, 2011. M.H. and J.R.G. gratefully acknowledge the financial support of the Nanoelectronics Research Initiative (NRI) through INDEX Center. T.A.P., H.K., and W.A.G. acknowledge support from the WCU programs through NRF of Korea funded by the MEST (R31-2008-000-10055-0). The authors also thank Changyao Chen, James Hone, and Yeojun Chun for help with sample fabrication and Zachary H. Aitken for help in finite element simulation and stimulating scientific discussion.Attached Files
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Supplemental Material - nl104227t_si_003.wmv
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Additional details
- Eprint ID
- 23150
- DOI
- 10.1021/nl104227t
- Resolver ID
- CaltechAUTHORS:20110329-092152539
- Nanoelectronics Research Initiative (NRI)
- Ministry of Education, Science and Technology (Korea)
- R31-2008-000-10055-0
- Created
-
2011-03-29Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute