Design approaches and materials processes for ultrahigh efficiency lattice mismatched multi-junction solar cells

Abstract

In this study, we report synthesis of large area (>2cm^2), crack-free GaAs and GaInP double heterostructures grown in a multi-junction solar cell-like structure by MOCVD. Initial solar cell data are also reported for GaInP top cells. These samples were grown on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. The double heterostructures exhibit radiative emission with uniform intensity and wavelength in regions not containing interfacial bubble defects. The minority carrier lifetime of ~1ns was estimated from photoluminescence decay measurements in both double heterostructures. We also report on the structural characteristics of heterostructures, determined via atomic force microscopy and transmission electron microscopy, and correlate these characteristics to the spatial variation of the minority carrier lifetime.

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