Definitive Band Gaps for Single-Wall Carbon Nanotubes
Abstract
We report ab initio quantum mechanical calculations of band structures of single-walled carbon nanotubes (SWNTs) using the B3LYP flavor of density functional theory. In particular, we find excellent agreement with the small band gaps in "metallic" zigzag SWNTs observed by Lieber et al. [0.079 vs 0.080 eV for (9,0), 0.041 vs 0.042 eV for (12,0), and 0.036 eV vs 0.029 eV for (15,0)]. This contrasts with the results from LDA and PBE, which lead to band gaps 70−100% too small, and with those from the GW correction to LDA, which leads to a gap two times too large. Interestingly we find that the (5,0) system, expected to be a large gap semiconductor, is metallic. These results show that B3LYP leads to very accurate band gaps for CNTs, suggesting its use in designing CNT devices. We find that the effective mass of the CNT (significant in designing CNT devices) scales inversely proportional to the square of the diameter.
Additional Information
© 2010 American Chemical Society. Received Date: June 30, 2010. Accepted Date: September 14, 2010. Article ASAP September 20, 2010. Published In Issue October 07, 2010. This work was supported partially by Intel Components Research (Kevin O'Brien, Florian Gstrein, and James Blackwell), by the National Science Foundation (CCF-0524490 and CTS-0608889), and the Functional Engineered Nano Architects (FENA) via the Microelectronics Advanced Research Corporation (MARCO) with the prime award (2009-NT-2048) at UCLA (PI Kang Wang). The computer systems used in this research were provided by ARO-DURIP and ONR-DURIP. Supporting Information: Geometries of optimized structures and additional band structures. This material is available free of charge via the Internet at http://pubs.acs.org.Attached Files
Supplemental Material - jz100889u_si_001.pdf
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Additional details
- Eprint ID
- 20572
- DOI
- 10.1021/jz100889u
- Resolver ID
- CaltechAUTHORS:20101028-080911813
- Intel Components Research
- NSF
- CCF-0524490
- NSF
- CTS-0608889
- UCLA Functional Engineered Nano Architects (FENA) via the Microelectronics Advanced Research Corporation (MARCO)
- 2009-NT-2048
- Created
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2010-11-16Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field