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Published August 18, 2009 | Published
Book Section - Chapter Open

On the capacity of bounded rank modulation for flash memories

Abstract

Rank modulation has been introduced as a new information representation scheme for flash memories. Given the charge levels of a group of flash cells, sorting is used to induce a permutation, which in turn represents data. Motivated by the lower sorting complexity of smaller cell groups, we consider bounded rank modulation, where a sequence of permutations of given sizes are used to represent data. We study the capacity of bounded rank modulation under the condition that permutations can overlap for higher capacity.

Additional Information

© 2009 IEEE. This work was supported in part by the NSF CAREER Award CCF-0747415, the NSF grant ECCS-0802107, and the Caltech Lee Center for Advanced Networking.

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Published - Wang2009p110862009_Ieee_International_Symposium_On_Information_Theory_Vols_1-_4.pdf

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Wang2009p110862009_Ieee_International_Symposium_On_Information_Theory_Vols_1-_4.pdf

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August 20, 2023
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October 20, 2023