Published November 2008
| Published
Journal Article
Open
Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode
- Creators
- Hu, Xin
- Tang, Shaoqiang
- Leroux, Maxime
Chicago
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Abstract
We investigate the validity of stationary simulations for semiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type models. Careful numerical investigations to a quantum hydrodynamic model reveal that the transient simulations do not always converge to the steady states. In particular, growing oscillations are observed at relatively large applied voltage. A dynamical bifurcation is responsible for the stability interchange of the steady state. Transient and stationary computations are also performed for a unipolar quantum drift-diffusion model.
Additional Information
© 2008 Global-Science Press. Received 7 March 2008; Accepted (in revised version) 25 May 2008. Available online 10 July 2008. We would like to thank the anonymous referee for stimulating discussions. This research is partially supported by NSFC under grant No. 90407021, National Basic Research Program of China under contract number 2007CB814800, and the China Ministry of Education under contract number NCET-06-00l1.Attached Files
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Additional details
- Eprint ID
- 19413
- Resolver ID
- CaltechAUTHORS:20100812-134429117
- National Natural Science Foundation of China
- 90407021
- National Basic Research Program of China
- 2007CB814800
- Ministry of Education (China)
- NCET-06-0011
- Created
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2010-08-13Created from EPrint's datestamp field
- Updated
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2019-10-07Created from EPrint's last_modified field