Published May 15, 2010
| Published
Journal Article
Open
Enhanced resistance of single-layer graphene to ion bombardment
- Creators
- Lopez, J. J.
- Greer, F.
-
Greer, J. R.
Abstract
We report that single-layer graphene on a SiO_2/Si substrate withstands ion bombardment up to ~7 times longer than expected when exposed to focused Ga^+ ion beam. The exposure is performed in a dual beam scanning electron microscope/focused ion beam system at 30 kV accelerating voltage and 41 pA current. Ga^+ ion flux is determined by sputtering a known volume of hydrogenated amorphous carbon film deposited via plasma-enhanced chemical vapor deposition.
Additional Information
© 2010 American Institute of Physics. Received 17 January 2010; accepted 15 April 2010; published online 27 May 2010. We gratefully acknowledge financial support of the NRI INDEX Center. We thank M. J. Burek for useful discussions and assistance with the DualBeam system. Access to the Dual-Beam System was provided by the Kavli Nanoscience Institute (KNI) at Caltech. We also appreciate assistance from E. Miura and G. R. Rossman with Raman Spectroscopy, and we thank C. Daraio for access to the optical microscope.Attached Files
Published - Lopez2010p10443J_Appl_Phys.pdf
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Lopez2010p10443J_Appl_Phys.pdf
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Additional details
- Eprint ID
- 18814
- Resolver ID
- CaltechAUTHORS:20100625-110342947
- NRI INDEX Center
- Created
-
2010-08-03Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute