Published 2009
| Published
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The Future of High Frequency Circuit Design
- Creators
-
Hajimiri, Ali
Abstract
The cut-off wavelengths of integrated silicon transistors have exceeded the die sizes of the chips being fabricated with them. Combined with the ability to integrate billions of transistors on the same die, this size-wavelength cross-over has produced a unique opportunity for a completely new class of holistic circuit design combining electromagnetics, device physics, circuits, and communication system theory in one place. In this paper, we discuss some of these opportunities and their associated challenges in greater detail and provide a few of examples of how they can be used in practice.
Additional Information
© 2009 IEEE. This work has been supported in part by Lee Center for Advanced Networking. The author would like to particularly thank Dr. A. Babakhani, as well as F. Bohn, A. Chang, K. Sengupta, S. Bowers, Dr. H. Wang, Prof. D. B. Rutledge, Prof. S. Weinreb of Caltech and Dr. A. Natarajan, Dr. I. Aoki, Dr. S. Kee, Dr. A. Komijani, Dr. X. Guan, Dr. Y. Wang, Prof. H. Hashemi, Prof. J. Buckwalter, and Prof. E. Afshari formerly of Caltech for their numerous contribution to Caltech's mm-wave activities. We have benefitted from the support of Caltech's Lee Center for Advance Networking, Raytheon Company, National Science Foundation, and DARPA Trusted Foundry Program. Parts of this work appeared in [25] and [26] previously.Attached Files
Published - Hajimiri2009p100232009_Proceedings_Of_Esscirc.pdf
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Hajimiri2009p100232009_Proceedings_Of_Esscirc.pdf
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Additional details
- Eprint ID
- 18661
- Resolver ID
- CaltechAUTHORS:20100611-153236105
- Caltech's Lee Center for Advance Networking
- Raytheon Company
- NSF
- Defense Advanced Research Projects Agency (DARPA) Trusted Foundry Program
- Created
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2010-06-28Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field
- Series Name
- Proceedings of the European Solid-State Circuits Conference