Silicon microcantilevers with MOSFET detection
Abstract
We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have been fabricated by As implantation to obtain shallow PN junctions. The cantilevers have been oriented on the non-standard (1 0 0) crystallographic direction of silicon, to maximize the stress response of the NMOS transistors. The force sensitivity and resolution of the cantilevers have been tested by applying a force with an AFM tip. Values of 25 μV/pN and 56 pN respectively have been obtained for a force applied at the tip of a cantilever with a length of 200 μm, a width of 24 μm and a silicon thickness of 340 nm.
Additional Information
© 2009 Elsevier B.V. Received 13 September 2009; revised 3 November 2009; accepted 23 November 2009. Available online 26 November 2009. Work supported by the Spanish Ministry of Science and Innovation through Project TEC2007-65692, and through the NANOSELECT Project of the Consolider-Ingenio 2010 Programme.Additional details
- Eprint ID
- 18417
- DOI
- 10.1016/j.mee.2009.11.125
- Resolver ID
- CaltechAUTHORS:20100525-085144276
- Project TEC2007-65692
- Spanish Ministry of Science and Innovation
- NANOSELECT Project of the Consolider-Ingenio 2010 Programme
- Created
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2010-05-25Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field