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Published January 2010 | public
Journal Article

A light-emitting memristor

Abstract

A light-emitting memristor (LEM) is reported based on a metal/mixed conductor/metal structure, where the mixed conductor is the ionic transition metal complex ruthenium(II) tris(bipyridine) with hexafluorophosphate counter ions. The device shows memory effects upon the application of an ac bias, in both current and electroluminescence intensity. The observation of memory in light emission offers the potential for optical read-out of the state of memristive devices.

Additional Information

© 2009 Elsevier B.V. Received 11 May 2009; revised 14 September 2009; accepted 16 September 2009. Available online 19 September 2009. This work was supported by the National Science Foundation and the ELI program at Cornell University. The work was performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (Grant ECS-0335765).

Additional details

Created:
August 21, 2023
Modified:
October 20, 2023