The dynamics of highly excited electronic systems: Applications of the electron force field
- Creators
- Su, Julius T.
-
Goddard, William A., III
Abstract
Highly excited heterogeneous complex materials are essential elements of important processes, ranging from inertial confinement fusion to semiconductor device fabrication. Understanding the dynamics of these systems has been challenging because of the difficulty in extracting mechanistic information from either experiment or theory. We describe here the electron force field (eFF) approximation to quantum mechanics which provides a practical approach to simulating the dynamics of such systems. eFF includes all the normal electrostatic interactions between electrons and nuclei and the normal quantum mechanical description of kinetic energy for the electrons, but contains two severe approximations: first, the individual electrons are represented as floating Gaussian wave packets whose position and size respond instantaneously to various forces during the dynamics; and second, these wave packets are combined into a many-body wave function as a Hartree product without explicit antisymmetrization. The Pauli principle is accounted for by adding an extra spin-dependent term to the Hamiltonian. These approximations are a logical extension of existing approaches to simulate the dynamics of fermions, which we review. In this paper, we discuss the details of the equations of motion and potentials that form eFF, and evaluate the ability of eFF to describe ground-state systems containing covalent, ionic, multicenter, and/or metallic bonds. We also summarize two eFF calculations previously reported on electronically excited systems: (1) the thermodynamics of hydrogen compressed up to ten times liquid density and heated up to 200 000 K; and (2) the dynamics of Auger fragmentation in a diamond nanoparticle, where hundreds of electron volts of excitation energy are dissipated over tens of femtoseconds. These cases represent the first steps toward using eFF to model highly excited electronic processes in complex materials.
Additional Information
© 2009 American Institute of Physics. Received 30 June 2009; accepted 13 November 2009; published online 22 December 2009. Support for this work was provided by the DOE PSAAP program at Caltech and by gifts associated with industrial funding from Chevron, Dow-Corning, Intel, Toshiba, Pfizer, Boehringer-Ingelheim, Allozyne, and PharmSelex. Computational facilities were provided by ARO-DURIP, ONR-DURIP. In addition we thank the LLNL (ASC/PROM) for providing access to substantial computer resources.Attached Files
Published - Su2009p6854J_Chem_Phys.pdf
Supplemental Material - 028948jcp_EPAPS.pdf
Files
Name | Size | Download all |
---|---|---|
md5:325246a9bef031eaf691fc635db17acd
|
124.5 kB | Preview Download |
md5:ea703e20d5ab280088ac1972f6d11e94
|
1.9 MB | Preview Download |
Additional details
- Eprint ID
- 17285
- Resolver ID
- CaltechAUTHORS:20100122-112313256
- Chevron
- Dow-Corning
- Intel
- Toshiba
- Pfizer
- Boehringer-Ingelheim
- Allozyne
- PharmSelex
- Department of Energy (DOE)
- Created
-
2010-01-28Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field
- Other Numbering System Name
- WAG
- Other Numbering System Identifier
- 0833