Published September 14, 2009
| Published
Journal Article
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Photoluminescence-based measurements of the energy gap and diffusion length of Zn_3P_2
Abstract
The steady-state photoluminescence spectra of zinc phosphide (Zn_3P_2) wafers have revealed a fundamental indirect band gap at 1.38 eV, in close proximity to the direct band gap at 1.50 eV. These values are consistent with the values for the indirect and direct band gaps obtained from analysis of the complex dielectric function deduced from spectroscopic ellipsometric measurements. Bulk minority carrier lifetimes of 20 ns were observed by time-resolved photoluminescence decay measurements, implying minority-carrier diffusion lengths of ≥ 7 µm.
Additional Information
©2009 American Institute of Physics. Received 29 June 2009; accepted 20 August 2009; published 14 September 2009. This work was supported by the Office of Energy Efficiency and Renewable Energy, U.S. Department of Energy under Grant No. DE-FG36-08GO18006, as well as Caltech Center for Sustainable Energy Research (CCSER). We acknowledge use of facilities supported by the Beckman Institute Laser Resource Center (BILRC). One of us (G.M.K.) acknowledges support under an NDSEG graduate fellowship.Attached Files
Published - ApplPhysLett_95_112103.pdf
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ApplPhysLett_95_112103.pdf
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Additional details
- Eprint ID
- 16318
- Resolver ID
- CaltechAUTHORS:20091013-093453282
- Department of Energy (DOE)
- DE-FG36-08GO18006
- Caltech Center for Sustainable Energy Research
- Caltech Beckman Institute
- National Defense Science and Engineering Graduate (NDSEG) Fellowship
- Created
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2009-10-13Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field