Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films
Abstract
We demonstrate piezoelectrically actuated, electrically tunable nanomechanical resonators based on multilayers containing a 100-nm-thin aluminum nitride (AlN) layer. Efficient piezoelectric actuation of very high frequency fundamental flexural modes up to ~80 MHz is demonstrated at room temperature. Thermomechanical fluctuations of AlN cantilevers measured by optical interferometry enable calibration of the transduction responsivity and displacement sensitivities of the resonators. Measurements and analyses show that the 100 nm AlN layer employed has an excellent piezoelectric coefficient, d_(31)=2.4 pm/V. Doubly clamped AlN beams exhibit significant frequency tuning behavior with applied dc voltage.
Additional Information
© 2009 American Institute of Physics. Received: 22 June 2009; accepted: 23 July 2009; published online: 9 September 2009. We are grateful to G. Villanueva, J.L. Arlett, and J.E. Sader for helpful discussions and Y. Wu for illustration. We acknowledge financial support for this work from DARPA/ MTO and SPAWAR under the Grant No. N66001-07-1-2039.Attached Files
Published - Karabalin2009p5981Appl_Phys_Lett.pdf
Files
Name | Size | Download all |
---|---|---|
md5:e798ba71ab368d96f63d4c42c00378c9
|
617.3 kB | Preview Download |
Additional details
- Eprint ID
- 16156
- Resolver ID
- CaltechAUTHORS:20091001-140129826
- Defense Advanced Research Projects Agency (DARPA)
- N66001-07-1-2039
- Space and Naval Warfare System Center (SPAWARSYSCEN)
- Ontario Ministry of Transportation
- Created
-
2009-10-02Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute