Gate Voltage Controllable Non-Equilibrium and Non-Ohmic Behavior in Suspended Carbon Nanotubes
Abstract
In this work, we measure the electrical conductance and temperature of individual, suspended quasi-metallic single-walled carbon nanotubes under high voltage biases using Raman spectroscopy, while varying the doping conditions with an applied gate voltage. By applying a gate voltage, the high-bias conductance can be switched dramatically between linear (Ohmic) behavior and nonlinear behavior exhibiting negative differential conductance (NDC). Phonon populations are observed to be in thermal equilibrium under Ohmic conditions but switch to nonequilibrium under NDC conditions. A typical Landauer transport model assuming zero bandgap is found to be inadequate to describe the experimental data. A more detailed model is presented, which incorporates the doping dependence in order to fit this data.
Additional Information
Copyright © 2009 American Chemical Society. Received April 1, 2009; Revised Manuscript Received May 28, 2009. Publication Date (Web): July 10, 2009. This research was supported in part by DOE Award No. DE-FG02−07ER46376 and the National Science Foundation Graduate Research Fellowship Program. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF funded NNIN network. Supporting Information: Electrical data from two additional suspended, metallic single-walled carbon nanotubes. This material is available free of charge via the Internet at http://pubs.acs.org.Attached Files
Supplemental Material - Bushmakernl901042w_si_001.pdf
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Additional details
- Eprint ID
- 15324
- DOI
- 10.1021/nl901042w
- Resolver ID
- CaltechAUTHORS:20090826-112851851
- DE-FG02−07ER46376
- Department of Energy
- NSF
- Created
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2009-09-11Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field