Broadband enhancement of light emission in silicon slot waveguides
Abstract
We investigate the light emission properties of electrical dipole emitters inside 2-dimensional (2D) and 3-dimensional (3D) silicon slot waveguides and evaluate the spontaneous emission enhancement (F_p) and waveguide coupling ratio (β). Under realistic conditions, we find that greater than 10-fold enhancement in F_p can be achieved, together with a β as large as 0.95. In contrast to the case of high Q optical resonators, such performance enhancements are obtained over a broad wavelength region, which can cover the entire emission spectrum of popular optical dopants such as Er. The enhanced luminescence efficiency and the strong coupling into a limited set of well-defined waveguide modes enables a new class of power-efficient, CMOS-compatible, waveguide-based light sources.
Additional Information
© 2009 Optical Society of America. Original Manuscript: March 9, 2009. Manuscript Accepted: April 20, 2009. Revised Manuscript: April 20, 2009. Published: April 21, 2009. The authors wish to thank Thomas Koch and Gernot Pomrenke for helpful discussions. Y.C.J. acknowledges the support of the Samsung scholarship. R.M.B. acknowledges the support of the National Defense Science and Engineering Graduate Fellowship. This work was supported by Si-based Laser Initiative of the Multidisciplinary University Research Initiative (MURI) under the Air Force Aerospace Research (Award No. FA9550-06-1-0470).Attached Files
Published - Jun2009p4473Opt_Express.pdf
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Additional details
- Eprint ID
- 15199
- Resolver ID
- CaltechAUTHORS:20090820-155656677
- Samsung
- National Defense Science and Engineering Graduate (NDSEG) Fellowship
- Air Force Office of Scientific Research
- FA9550-06-1-0470
- Created
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2009-09-08Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field