Published February 11, 2009
| public
Journal Article
Direct observation of Born-Oppenheimer approximation breakdown in carbon nanotubes
Abstract
Raman spectra and electrical conductance of individual, pristine, suspended, metallic single-walled carbon nanotubes are measured under applied gate potentials. The G- band is observed to downshift with small applied gate voltages, with the minima occurring at E_F = ±½E_phonon, contrary to adiabatic predictions. A subsequent upshift in the Raman frequency at higher gate voltages results in a "W"-shaped Raman shift profile that agrees well with a nonadiabatic phonon renormalization model. This behavior constitutes the first experimental confirmation of the theoretically predicted breakdown of the Born−Oppenheimer approximation in individual single-walled carbon nanotubes.
Additional Information
© 2009 American Chemical Society. Published In Issue: February 11, 2009; Article ASAP: January 22, 2009; Received: September 19, 2008; Revised: November 25, 2008. This research was supported in part by DOE Award No. DE-FG02-07ER46376 and the National Science Foundation Graduate Research Fellowship Program. We would like to thank F. Mauri and M. Saitta for discussions concerning the implementation of the phonon energy renormalization model.Additional details
- Eprint ID
- 14403
- DOI
- 10.1021/nl802854x
- Resolver ID
- CaltechAUTHORS:20090617-121733315
- DE-FG02-07ER46376
- DOE
- NSF
- Created
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2009-08-13Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field