Theoretical investigation of the effect of strain on phase separation in epitaxial layers
- Creators
- Zur, A.
- McGill, T. C.
Abstract
We have theoretically investigated the phenomenon of alloy clustering in epitaxial films and, in particular, the case of AlxGa1–xAs grown epitaxially on GaAs. We show in the general case that the elastic strain in the film, caused by the finite mismatch between the lattice parameters of the film and the substrate, may change the miscibility properties of the film. A miscibility gap could be opened in the material composing the film, even if there is no such gap in the bulk material. Conversely, the strain could stabilize a solid solution in the film in cases where there is a miscibility gap in the bulk material of which the film is composed. We estimate that these effects are too small to account for phase separation in the case of AlxGa1–xAs on GaAs, but could be important in other systems, such as In(As, Sb).
Additional Information
© 1985 American Vacuum Society. (Received 14 February 1985; accepted 18 April 1985) The authors acknowledge the support of the Office of Naval Research under Contract No. N00014-84-K-0501. Discussions with P. Petroff of Bell Laboratories and T.S. Kuan of IBM T.J. Watson Research Center were very helpful in clarifying the experimental situation. We would also like to acknowledge useful discussions with W.L. Johnson and A. Zunger.Files
| Name | Size | Download all |
|---|---|---|
|
md5:256d776f077fca40d5585597a8911e27
|
792.6 kB | Preview Download |
Additional details
- Eprint ID
- 10415
- Resolver ID
- CaltechAUTHORS:ZURjvstb85
- Created
-
2008-05-02Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field