Published December 1, 1999
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Journal Article
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An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor
- Creators
- Zirath, Herbert
- Rutledge, David B.
Abstract
In this paper, an lateral diffused metal-oxide-semiconductor-based very high-frequency class-E power amplifier has been investigated theoretically and experimentally. Simulations were verified by amplifier measurements and a record-high class-E output power was obtained at 144 MHz, which is in excellent agreement with simulations. The key of the results is the use of efficient device models, simulation tools, and the invention of a novel high-Q inductor for the output series resonance network. The latter allows for low losses in the output network and, simultaneously, a wide tuning range for maximum output power or maximum efficiency optimization.
Additional Information
© Copyright 1999 IEEE. Reprinted with permission. Manuscript received March 26, 1999; revised July 16, 1999. This work was supported by the Army Research Office and by D. Antsos, Jet Propulsion Laboratory, Pasadena, CA.Files
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Additional details
- Eprint ID
- 2206
- Resolver ID
- CaltechAUTHORS:ZIRieeetmtt99
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2006-03-15Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field