Published September 1, 1987
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Journal Article
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Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-<Al> interface
- Creators
- Zhao, X.-A.
- Yang, H.-Y.
- Nicolet, M-A.
Abstract
Substrates of large grained aluminum crystals were prepared by the strain annealing technique, and Ni films were vacuum evaporated on these substrates after an in situ sputter cleaning process. Upon thermal annealing of samples in vacuum, a laterally uniform growth of NiAl3 is observed, starting from 330 °C, without any indication of boundary diffusion effects. The aluminide phase grows as (duration)1/2 after an initial incubation period with an activation energy of 1.4 eV, i.e., K=x2/t=0.387 (cm^2/s)exp(–1.4 eV/kT) for 600 K
Additional Information
Copyright © 1987 American Institute of Physics (Received 13 February 1987; accepted 7 May 1987) We thank R. Gorris, Caltech, for technical assistance. This work was financially supported in part by the Office of Naval Research under Contract No, N00014-84-K-0275.Files
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Additional details
- Eprint ID
- 4773
- Resolver ID
- CaltechAUTHORS:ZHAjap87
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2006-09-06Created from EPrint's datestamp field
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