Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAs

Creators: Zarem, H. A.; Lebens, J. A.; Nordstrom, K. B.; Sercel, P. C.; Sanders, S.; Eng, L. E.; Yariv, A.; Vahala, K. J.

Abstract

The ambipolar diffusion length and carrier lifetime are measured in AlxGa1−xAs for several mole fractions in the interval 0

Additional Information

© 1989 American Institute of Physics. Received 15 September 1989; accepted 20 October 1989. The authors would like to acknowledge the support of the Office of Naval Research, the National Science Foundation (NSF), and the SDIO-ISTC. Two of us (PS and SS) would like to acknowledge the support of a graduate NSF fellowship.

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