Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system
Abstract
We have used x-ray photoelectron spectroscopy to measure valence-band offsets in situ for AlSb/ZnTe, AlSb/GaSb, and GaSb/ZnTe(100) heterojunctions grown by molecular-beam epitaxy. For the AlSb/ZnTe heterojunction, a valence-band offset ΔEv=0.42±0.07 eV was obtained. Our data indicated that an intermediate compound, containing Al and Te, was formed at the AlSb/ZnTe(100) interface. Measurements of the AlSb/GaSb and GaSb/ZnTe valence-band offsets demonstrated a clear violation of band offset transitivity for the AlSb/GaSb/ZnTe material system, suggesting that chemical reactivity at the AlSb/ZnTe and GaSb/ZnTe interfaces can exert a significant influence on band offset values. Direct evidence of the influence of interfacial growth conditions on the AlSb/ZnTe and GaSb/ZnTe band offset values was also observed.
Additional Information
©1992 The American Physical Society. Received 8 June 1992. Two of us (E.T.Y. and M.C.P.) would like to acknowledge financial support from the AT&T Foundation and the IBM Corporation, respectively. Part of this work was supported by the Office of Naval Research under Grants Nos. N00014-90-J-1742 and N000014-89-J-1141.Files
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- 10614
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- CaltechAUTHORS:YUEprb92
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2008-05-21Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field