Published December 15, 1985
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InGaAsP p-i-n photodiodes for optical communication at the 1.3-µm wavelength
Abstract
The preparation and properties of Cd-diffused p-n homojunction InGaAsP photodiodes designed specifically for operation at the 1.3-µm wavelength are described. At a reverse bias of 10 V, the dark current of these diodes was as low as 15 pA. The peak responsivity at 1.3-µm wavelength was 0.7 A/W. An impulse response (full width at half maximum) of 60 ps and a 3-dB bandwidth of 5.5 GHz were achieved. J
Additional Information
Copyright © 1985 American Institute of Physics. Received 1 August 1985; accepted 30 August 1985. The research reported in this paper is supported through contracts with the National Science Foundation, the Office of Naval Research and the Air Force Office of Scientific Research. The authors wish to acknowledge the help of H. Chen, and Z. Rav-Noy for some measurements of device parameters.Files
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