Published February 15, 1985
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Cd diffused mesa-substrate buried heterostructure InGaAsP/InP laser
Abstract
A new type of buried heterostructure InGaAsP/InP lasers grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2-µm-wide active region.
Additional Information
Copyright © 1985 American Institute of Physics. Received 22 October 1984; accepted 4 December 1984. The research discussed in this paper is supported by the National Science Foundation and the Office of Naval Research and the Air Force Office of Scientific Research. The authors wish to thank T. Venkatesan of Bell Laboratories for taking the SEM picture.Files
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