MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlattices
Abstract
We present in this letter an investigation of compositional intermixing in AlAs/GaAs superlattices induced by 2 MeV oxygen ion implantation. The results are compared with implantation at 500 keV. In addition to Al intermixing in the direct lattice damage region by nuclear collision spikes, as is normally present in low-energy ion implantation, Al interdiffusion has also been found to take place in the subsurface region where MeV ion induced electronic spike damage dominates and a uniform strain field builds up due to defect generation and diffusion. Uniform compositional intermixing of the superlattices results after subsequent thermal annealing when Al interdiffusion is stimulated through recovery of the implantation-induced lattice strain field, the reconstruction and the redistribution of lattice defects, and annealing of lattice damage.
Additional Information
Copyright © 1990 American Institute of Physics. Received 20 April 1990; accepted 25 June 1990. This work is supported in part by the National Science Foundation grant DMR88-11795. The author (F.X.) is grateful to Dr. H. Wang and Professor Amnon Yariv at Caltech, Professor Hadis Morkoç at University of Illinois, and Dr. T. Venkatesan at Bellcore for their encouragement of this work and their valuable advice.Attached Files
Published - XIOapl90.pdf
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Additional details
- Eprint ID
- 12726
- Resolver ID
- CaltechAUTHORS:XIOapl90
- DMR88-11795
- National Science Foundation
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2008-12-21Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field