Silicon Nanocrystal Field-Effect Light-Emitting Devices
Abstract
We describe the operation of a light-emitting device in which silicon nanocrystals are electrically pumped via the field-effect electroluminescence (EL) mechanism. In contrast to the simultaneous bipolar carrier injection used in conventional p-n junction light-emitting diodes, this device employs sequential unipolar programming of both electrons and holes across a tunneling barrier from the same semiconductor channel. Light emission is strongly correlated with the injection of second carriers into nanocrystals that have been previously programmed with charges of the opposite sign. The properties of this device are well described by the model of a charge injection through Coulomb field modified tunneling processes. We additionally consider limiting performance bounds for potential future devices fabricated from nanocrystals with different radiative emission rates.
Additional Information
© 2007 IEEE. Reprinted with permission. Manuscript received December 16, 2005; revised September 21, 2006. [Posted online: 2006-12-11] This work was supported in part by Intel Corporation and in part by the Air Force Office of Scientific Research under MURI Grant FA9550-04-1-0434. The authors acknowledge R. Lindstedt, M. Giorgi, and G. Bourianoff for their assistance in device design and fabrication. Invited paper. Special Issue on Photonics. IEEE Journal on Selected Topics in Quantum Electronics, vol 12, no. 6, part 2, November/December 2006.Attached Files
Published - WALieeestqe06.pdf
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Additional details
- Eprint ID
- 7267
- Resolver ID
- CaltechAUTHORS:WALieeejstqe06
- Intel
- FA9550-04-1-0434
- Air Force Office of Scientific Research (AFOSR)
- Created
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2007-01-25Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field