Published September 17, 1990
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Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions
Abstract
Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their subsequent photoelectrochemical behavior have been probed by high-resolution x-ray photoelectron spectroscopy. GaAs photoanodes were chemically treated to prepare either an oxide-free near stoichiometric surface, a surface enriched in zero-valent arsenic (As0), or a substrate-oxide terminated surface. The current-voltage (I-V) behavior of each surface type was subsequently monitored in contact with several electrolytes.
Additional Information
Copyright © 1990 American Institute of Physics (Received 16 April 1990; accepted 2 July 1990) We thank the Department of Energy, Office of Basic Energy Sciences, for support of this work. We thank Dr. C. L. R. Lewis of Varian Associates, Palo Alto, CA, for a generous supply of GaAs samples and acknowledge R. P. Vasquez and M. H. Hecht of the Jet Propulsion Laboratory, Pasadena, CA, for assistance with the XPS instrument used in this study. N.S.L. also acknowledges support as an A. P. Sloan Fellow and as a Dreyfus Teacher-Scholar. Erratum: Appl. Phys. Lett. 57, 2262 (1990)Files
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