Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published February 15, 1991 | Published
Journal Article Open

Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves

Abstract

Results of a determination of strain perpendicular to the surface and of the damage in (100) Si single crystals irradiated by 250-keV Ar+ ions at 77 K are presented. Double-crystal x-ray diffraction and dynamical x-ray diffraction theory are used. Trial strain and damage distributions were guided by transmission electron microscope observations and Monte Carlo simulation of ion energy deposition. The perpendicular strain and damage profiles, determined after sequentially removing thin layers of Ar+-implanted Si, were shown to be self-consistent, proving the uniqueness of the deconvolution. Agreement between calculated and experimental rocking curves is obtained with strain and damage distributions which closely follow the shape of the trim simulations from the maximum damage to the end of the ion range but fall off more rapidly than the simulation curve near the surface. Comparison of the trim simulation and the strain profile of Ar+-implanted Si reveals the importance of annealing during and after implantation and the role of complex defects in the final residual strain distribution.

Additional Information

Copyright © 1991 American Institute of Physics. Received 21 September 1990; accepted 31 October 1990. This work was supported by the Semiconductor Research Corporation under Contract No. 87-SJ-100. We also acknowledge the support of the Swiss National Science Foundation that provided a fellowship to A. Dommann.

Attached Files

Published - TSAjap91.pdf

Files

TSAjap91.pdf
Files (387.1 kB)
Name Size Download all
md5:165a6ef2717d927f2d033bde89421473
387.1 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 17, 2023