High thermoelectric efficiency in lanthanum doped Yb14MnSb11

Abstract

Lanthanum doping of the high-temperature p-type thermoelectric material Yb_(14)MnSb_(11) enhances the figure of merit zT through carrier concentration tuning. This is achieved by substituting La^(3+) on the Yb^(2+) site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb_(13.6)La_(0.4)MnSb_(11) are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb_(14)Mn_(1−x)A_(lx)Sb_(11). Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb_(14)MnSb_(11)-based materials.

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