Pulsed electron beam induced recrystallization and damage in GaAs

Creators: Tandon, J. L.; Golecki, I.; Nicolet, M-A.; Sadana, D. K.; Washburn, J.

Abstract

Single-pulse electron-beam irradiations of 300-keV 10^(15)Kr+/cm^2 or 300-keV 3×10^(12)Se+/cm^2 implanted layers in unencapsulated <100> GaAs are studied as a function of the electron beam fluence. The electron beam pulse had a mean electron energy of ~-20 keV and a time duration of ~-10^(–7) s. Analyses by means of MeV He + channeling and TEM show the existence of narrow fluence window (0.4–0.7 J/cm^2) within which amorphous layers can be sucessfully recrystallized, presumably in the liquid phase regime. Too high a fluence produces extensive deep damage and loss of As.

Additional Information

©1979 The American Physical Society. Received 27 July 1979; accepted for publication 18 September 1979. This work was supported at Rockwell International, in part, by the Defense Advanced Research Projects Agency under ARPA Order No. 3595, Contract No. MDA903-78-C-0285. TEM investigations were performed at the Materials and Molecular Research Division of Lawrence Berkeley Laboratory, and supported by the Division of Materials Science, U.S. Department of Energy. We would like to thank Spire Corporation (Anton Greenwald) for electron beam irradiation. The help of E. Babcock at Rockwell International in implantations is acknowledged.

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